Photoresist composition for extreme ultraviolet and method of forming photoresist pattern using the same
US10353290B2 · kind B2 · utility
1Cited by
8References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 15, 2016 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Jun 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.