Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal
US10354862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2015 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Nov 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for manufacturing a group III nitride single crystal including: a reaction vessel including a reaction area, wherein in the reaction area, a group III source gas and a nitrogen source gas are reacted such that a group III nitride crystal is grown on a substrate; a susceptor arranged in the reaction area and supporting the substrate; a group III source gas supply nozzle supplying the group III source gas to the reaction area; and a nitrogen source gas supply nozzle supplying the nitrogen source gas to the reaction area, wherein the nitrogen source gas supply nozzle is configured to supply the nitrogen source gas and at least one halogen-based gas selected from the group consisting of a hydrogen halide gas and a halogen gas to the reaction area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.