Toru Nagashima
20Patents
2h-index
26Co-inventors
53Inventor score
Filing activity: Aug 3, 2007 → Dec 8, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9748410B2 | N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device | Electricity | 11 | Active |
| US8129208B2 | n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof | Electricity | 3 | Active |
| US9806205B2 | N-type aluminum nitride monocrystalline substrate | Electricity | 2 | Active |
| US8926752B2 | Method of producing a group III nitride crystal | Chemistry; Metallurgy | 2 | Active |
| US9145621B2 | Production method of an aluminum based group III nitride single crystal | Electricity | 1 | Active |
| US12105204B2 | Sensor system | Physics | 1 | Active |
| US12379497B2 | Object identification system | Physics | 0 | Active |
| US10822718B2 | Method for producing aluminum nitride single crystal substrate | Electricity | 0 | Active |
| US11754714B2 | Recognition sensor and control method thereof, automobile, automotive lamp, object recognition system, and object recognition method | Physics | 0 | Active |
| US11554792B2 | Sensing system and vehicle | Physics | 0 | Active |
| US10354862B2 | Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal | Electricity | 0 | Active |
| US12116697B2 | Group III nitride single crystal substrate and method for production thereof | Electricity | 0 | Active |
| US12077187B2 | Sensing system and vehicle | Physics | 0 | Active |
| US11348785B2 | Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal | Electricity | 0 | Active |
| US9691942B2 | Single-cystalline aluminum nitride substrate and a manufacturing method thereof | Chemistry; Metallurgy | 0 | Active |
| US11841435B2 | Object identification system | Physics | 0 | Active |
| US9840790B2 | Highly transparent aluminum nitride single crystalline layers and devices made therefrom | Emerging Cross-Sectional Technologies | 0 | Active |
| US9708733B2 | Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy | Electricity | 0 | Active |
| US7947577B2 | Method and apparatus for producing group III nitride | Electricity | 0 | Active |
| US11767612B2 | Group III nitride single crystal substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.