Compound semiconductor substrate with SiC layer
US10354864B2 · kind B2 · utility
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Key dates
| Filing date | Oct 17, 2016 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Oct 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/475
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor substrate having a desired quality is provided.A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum nitride) buffer layer formed on the SiC layer, an Al (aluminum) nitride semiconductor layer formed on the AlN buffer layer, a first GaN (gallium nitride) layer formed on the Al nitride semiconductor layer, a first AlN intermediate layer formed on the first GaN layer in contact with the first GaN layer, and a second GaN layer formed on the first AlN intermediate layer in contact with the first AlN intermediate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.