Sputtering system and method for forming a metal layer on a semiconductor device
US10354871B2 · kind B2 · utility
0Cited by
7References
12Claims
0Family size
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Key dates
| Filing date | Sep 11, 2017 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Sep 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.