Directional processing to remove a layer or a material formed over a substrate
US10354874B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2017 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Nov 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes forming a hard mask layer over a substrate. A multi-layer resist is formed over the hard mask layer. The multi-layer resist is etched to form a plurality of openings in the multi-layer resist to expose a portion of the hard mask layer. Ion are directionally provided at an angle to the multi-layer resist to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In one embodiment, the multi-layer resist is directionally etched by directing etch ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In another embodiment, the multi-layer resist is directionally implanted by directing implant ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.