Inventor · Hengshan, TW

Ya Hui Chang

57Patents
4h-index
86Co-inventors
69Inventor score

Filing activity: Jun 6, 2001 → Jul 31, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6458705B1 Method for forming via-first dual damascene interconnect structure Electricity 23 Expired
US8865595B2 Device and methods for forming partially self-aligned trenches Electricity 8 Active
US8563410B2 End-cut first approach for critical dimension control Electricity 7 Active
US10658184B2 Pattern fidelity enhancement with directional patterning technology Electricity 6 Active
US10861698B2 Pattern fidelity enhancement Electricity 3 Active
US8564068B2 Device and methods for small trench patterning Electricity 3 Active
US9341945B2 Photoresist and method of formation and use Electricity 3 Active
US11322362B2 Landing metal etch process for improved overlay control Electricity 3 Active
US9786569B1 Overlay measurement and compensation in semiconductor fabrication Electricity 3 Active
US8767302B2 Laminated optical disk Physics 2 Active
US9703918B2 Two-dimensional process window improvement Physics 2 Active
US7838173B2 Structure design and fabrication on photomask for contact hole manufacturing process window enhancement Physics 2 Active
US10707081B2 Fine line patterning methods Electricity 2 Active
US10761427B2 Photoresist and method of formation and use Electricity 2 Active
US10354874B2 Directional processing to remove a layer or a material formed over a substrate Electricity 2 Active
US11289332B2 Directional processing to remove a layer or a material formed over a substrate Electricity 2 Active
US9823574B2 Lithography alignment marks Emerging Cross-Sectional Technologies 2 Active
US8716804B2 Device and methods for small trench patterning Electricity 2 Active
US8592137B2 Methods for small trench patterning using chemical amplified photoresist compositions Electricity 2 Active
US9093276B2 Methods for small trench patterning using chemical amplified photoresist compositions Electricity 1 Active
US11796922B2 Method of manufacturing semiconductor devices Electricity 1 Active
US11791161B2 Pattern fidelity enhancement Electricity 1 Active
US9805154B2 Method of lithography process with inserting scattering bars Physics 1 Active
US9111864B2 Device and methods for small trench patterning Electricity 1 Active
US8730473B2 Multiple edge enabled patterning Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.