Thin film resistor with punch-through vias
US10354951B1 · kind B1 · utility
1Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2018 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Jan 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device including a thin film resistor (TFR) structure. The TFR structure is accessible by one or more conductive vias that extend vertically from an upper metal layer to completely penetrate a TFR layer positioned thereunder. The conductive vias are coupled to one or more sidewalls of the TFR layer at or near the sites of penetration. The TFR structure can be manufactured by a method that includes etching a via trench completely through the TFR layer and a dielectric layer above the TFR layer, and filling the via trench with a conductor coupled to a sidewall of the TFR layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.