Semiconductor device
US10355019B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2018 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Jul 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a first transistor, a first diode structure, and a second diode structure. The first transistor is disposed on the substrate. The first transistor includes a first gate electrode, a first source electrode, and a first drain electrode. The first gate electrode is connected to the substrate by the first diode structure. The first drain electrode is connected to the substrate by the second diode structure. The first diode structure and the second diode structure may be used to improve potential unbalance in the transistor, and operation performance and reliability of the semiconductor device may be enhanced accordingly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.