Photoelectric conversion device
US10355040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2017 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Feb 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/223
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An off-leakage current of a photodiode is reduced in a photoelectric conversion device. A photoelectric conversion device (100) includes: an oxide semiconductor layer (5) provided on a substrate (1); a passivation film (6) and a planarizing film (7) which are stacked on the oxide semiconductor layer; and a photodiode (9) including a lower electrode (91), a photoelectric conversion layer (92), and an upper electrode (93). The lower electrode is connected to a source electrode (4) via a contact hole provided in the passivation film and the planarizing film. No photoelectric conversion layer is provided directly above the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.