Method of manufacturing semiconductor device
US10355098B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2016 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Jan 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76862
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a technology capable of removing impurities remaining in a thin film when the film is formed and modifying a characteristic of the thin film according to a change in impurity concentration. There is provided a method of manufacturing a semiconductor device including: (a) repetitively supplying a plurality of gases including elements constituting a film in temporally separated pulses (in non-simultaneous manner) to form the film on the substrate; and (b) exciting a modifying gas including a reducing gas and at least one of a nitriding gas and an oxidizing gas by plasma and supplying the modifying gas excited by plasma to modify the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.