Masahito Kitamura
10Patents
1h-index
17Co-inventors
47Inventor score
Filing activity: Jun 24, 2010 → Jan 30, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9024284B2 | Superlattice phase change memory including Sb2Te3 layers containing Zr | Electricity | 4 | Active |
| US9735007B2 | Method of processing substrate, substrate processing apparatus, and recording medium | Electricity | 1 | Active |
| US10584419B2 | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium | Electricity | 1 | Active |
| US8685866B2 | Method of manufacturing semiconductor device and substrate processing apparatus | Electricity | 1 | Active |
| US9761456B2 | Method of manufacturing semiconductor device and substrate processing apparatus | Chemistry; Metallurgy | 0 | Active |
| US9368358B2 | Method of manufacturing a semiconductor device | Electricity | 0 | Active |
| US11047048B2 | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium | Electricity | 0 | Active |
| US11075114B2 | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium | Electricity | 0 | Active |
| US10388762B2 | Method of manufacturing semiconductor device | Electricity | 0 | Active |
| US10355098B2 | Method of manufacturing semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.