Semiconductor device and method of manufacturing the same
US10355102B2 · kind B2 · utility
11Cited by
26References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2018 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Mar 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6736
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes semiconductor wires disposed over a substrate, a source/drain epitaxial layer in contact with the semiconductor wires, a gate dielectric layer disposed on and wrapping around each channel region of the semiconductor wires, a gate electrode layer disposed on the gate dielectric layer and wrapping around the each channel region, and dielectric spacers disposed in recesses formed toward the source/drain epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.