Method for forming a non-volatile memory cell, non-volatile memory cell formed according to said method and microelectronic device comprising such memory cells
US10355207B2 · kind B2 · utility
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Key dates
| Filing date | Mar 21, 2018 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Mar 21, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for forming a non-volatile memory cell intended to switch the memory cell from an unformed state to a formed state, the memory cell including an ordered stack of a lower electrode, a layer of insulating material and an upper electrode. The forming method includes a breakdown operation in which at least one laser shot is emitted towards the layer of insulating material to make the layer of insulating material active by making it pass from a high resistance state to a low resistance state, the memory cell being formed when the layer of insulating material is active.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.