Jean Coignus
7Patents
1h-index
16Co-inventors
40Inventor score
Filing activity: Jan 15, 2016 → Nov 2, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9852801B1 | Method for determining a leakage current through an inter-gate dielectric structure of a flash memory cell | Physics | 1 | Active |
| US10355207B2 | Method for forming a non-volatile memory cell, non-volatile memory cell formed according to said method and microelectronic device comprising such memory cells | Physics | 0 | Active |
| US11145663B2 | Method for fabricating a ferroelectric memory and method for co-fabrication of a ferroelectric memory and of a resistive memory | Electricity | 0 | Active |
| US9627074B2 | Method for determining an optimal voltage pulse for programming a flash memory cell | Physics | 0 | Active |
| US10067185B2 | System for the characterisation of a flash memory cell | Physics | 0 | Active |
| US11656267B2 | Transistor characterization | Physics | 0 | Active |
| US12363918B2 | Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory and device co-integrating a ferroelectric memory and an OxRAM resistive memory | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.