Tailoring current magnitude and duration during a programming pulse for a memory device
US10360977B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2018 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Mar 30, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Technology for a memory device is described. The memory device can include an array of memory cells and a memory controller. The memory controller can receive a request to program a memory cell within the array of memory cells. The memory controller can select a current magnitude and a duration of the current magnitude for a programming set pulse based on a polarity of access for the memory cell, a number of prior write cycles for the memory cell, and electrical distances between the memory cell and wordline/bitline decoders within the array of memory cells. The memory controller can initiate, in response to the request, the programming set pulse to program the memory cell within the array of memory cells. The selected current magnitude and the selected duration of the current magnitude can be applied during the programming set pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.