Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure
US10361077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2016 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Jan 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for producing a semiconductor structure, characterized in that the method comprises a step (201) of depositing a crystalline passivation layer continuously covering the entire surface of a layer based on group III nitrides, said crystalline passivation layer, which is deposited from a precursor containing silicon atoms and a flow of nitrogen atoms, consisting of silicon atoms bound to the surface of the layer based on group III nitrides and arranged in a periodical arrangement such that a diffraction image of said crystalline passivation layer obtained by grazing-incidence diffraction of electrons in the direction [1-100] comprises:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.