Eric Frayssinet
6Patents
3h-index
10Co-inventors
50Inventor score
Filing activity: Oct 28, 2003 → Jan 21, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7118929B2 | Process for producing an epitaxial layer of gallium nitride | Chemistry; Metallurgy | 28 | Expired |
| US9093271B2 | Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method | Electricity | 4 | Active |
| US7560296B2 | Process for producing an epitalixal layer of galium nitride | Electricity | 4 | Active |
| US8030101B2 | Process for producing an epitaxial layer of galium nitride | Electricity | 2 | Active |
| US10361077B2 | Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure | Electricity | 0 | Active |
| US10522346B2 | Production of a semiconductor support based on group III nitrides | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.