Semiconductor device and method for manufacturing such a semiconductor device
US10361082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2018 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Jun 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is provided with: (a) providing a wide bandgap substrate product, (b) for forming two channel layers applying a first mask and applying a p first dopant, for forming two source regions forming a second mask by applying a further layer on the lateral sides of the first mask and applying an n second dopant, for forming two well layers forming a third mask by removing such part of the second mask between the source regions and applying a p third dopant, wherein a well layer depth is at least as large as a channel layer depth, (c) after step (b) for forming a plug applying a fourth mask, which covers the source regions and the channel layers and applying a p fourth dopant to a greater depth than the well layer depth and with a higher doping concentration than the well layers; wherein the well layers surround the plug in the lateral direction and separate it from the two source regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.