Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same
US10361118B2 · kind B2 · utility
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Key dates
| Filing date | Apr 27, 2017 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Aug 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.