Indium gallium nitride red light emitting diode and method of making thereof
US10361341B2 · kind B2 · utility
10Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2017 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Nov 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.