Process for manufacturing a microelectronic device having a black surface, and microelectronic device
US10364145B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Mar 16, 2017 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | May 2, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03B21/2033
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A roughened silicon surface is formed by a process including repetitively performed roughening cycles. Each roughening cycles including a step for depositing a non-planar polymeric layer over an area of a silicon body and a step for plasma etching the polymeric layer and the area of the silicon body etch in a non-unidirectional way. As a result, a surface portion of the silicon body is removed, in a non-uniform way, to a depth not greater than 10 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.