Patent · US Active

Ion-sensitive structure and method for producing the same

US10365244B2 · kind B2 · utility

0Cited by

3References

23Claims

0Family size

Assignee

Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

Eberhard Kurth · Radebeul, DE
Christian Kunath · Dresden, DE
Harald Schenk · Dresden, DE

Key dates

Filing date	Mar 18, 2016
Grant date	Jul 30, 2019
Priority date	—
Expiry date	Mar 18, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/414
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An ion-sensitive structure includes a semiconductor structure and a layer stack disposed on the semiconductor structure having a doped intermediate layer including a doping material and a first metal oxide material. The semiconductor structure is configured to change an electric characteristic based on a contact of the ion-sensitive structure with an electrolyte including ions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.