Eberhard Kurth
8Patents
3h-index
11Co-inventors
54Inventor score
Filing activity: Apr 24, 1995 → Mar 18, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6891655B2 | High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices | Performing Operations; Transporting | 115 | Expired |
| US7321143B2 | Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor | Physics | 13 | Expired |
| US5602467A | Circuit for measuring ion concentrations in solutions | Physics | 5 | Expired |
| US8461587B2 | Ion-sensitive sensor with multilayer construction in the sensitive region | Physics | 3 | Active |
| US7355200B2 | Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor | Physics | 2 | Expired |
| US7728363B2 | Protective structure for semiconductor sensors | Physics | 0 | Active |
| US9383334B2 | Ion-sensitive layer structure for an ion-sensitive sensor and method for manufacturing the same | Electricity | 0 | Active |
| US10365244B2 | Ion-sensitive structure and method for producing the same | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.