Patent · US Active

Programming for electronic memories

US10366752B2 · kind B2 · utility

2Cited by

14References

10Claims

0Family size

Assignee

Technion Research & Development Foundation Limited · IL

Inventors

Misbah Ramadan · Nazareth, IL
Shahar Kvatinsky · Hanaton, IL
Ran Ginosar · Nofit, IL

Key dates

Filing date	Dec 7, 2017
Grant date	Jul 30, 2019
Priority date	—
Expiry date	Dec 7, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/77
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Memory circuitry comprises memory cells having two terminals and a feedback path connected between the two terminals. The feedback path is used to adaptively amplify identical programming pulses that serve to change memory states of the memory cell, and the amplification is based on a current resistive level of the memory cell, which may for example be a multi-level memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.