Patent · US Active

Integrated structures, capacitors and methods of forming capacitors

US10366901B2 · kind B2 · utility

2Cited by

3References

12Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Eric H. Freeman · Kuna, US
Paolo Tessariol · Montebelluna, IT

Key dates

Filing date	Mar 6, 2017
Grant date	Jul 30, 2019
Priority date	—
Expiry date	Mar 6, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/716
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Some embodiments include an integrated structure having a semiconductor base and an insulative frame over the semiconductor base. The insulative frame has vertically-spaced sheets of first insulative material, and pillars of second insulative material between the vertically-spaced sheets. The first and second insulative materials are different from one another. Conductive plates are between the vertically-spaced sheets and are directly against the insulative pillars. Some embodiments include capacitors, and some embodiments include methods of forming capacitors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.