Semiconductor device and method for manufacturing same
US10367000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2017 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Sep 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided above the foundation layer, a semiconductor body, and a charge storage portion. The stacked body includes a plurality of electrode layers stacked with an air gap interposed, a plurality of select gate layers stacked in a stacking direction of the electrode layers, and an insulating body provided between the select gate layers adjacent to each other in the stacking direction. The semiconductor body extends in the stacking direction in the stacked body. The charge storage portion is provided between the semiconductor body and one of the electrode layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.