CMOS image sensor structure with crosstalk improvement

US10367019B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hung-Chang Chang · Tainan, TW
• Chun-Yuan Hsu · Taipei, TW
• Szu-Hung Yang · Tainan, TW

Key dates

• Filing date: Jan 29, 2015
• Grant date: Jul 30, 2019
• Expiry date: Jan 29, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

A semiconductor device includes a substrate, a device layer, color filters and a passivation layer. The device overlies the substrate, and has a first surface and a second surface opposite to the first surface. The device layer includes a grid structure disposed on the second surface of the device layer, and the grid structure includes cavities. The first surface of the device layer is adjacent to the substrate. The color filters fill in the cavities. The passivation layer is disposed on the second surface of the device layer, and covers the grid structure and the color filters.