Transistor structure

US10367068B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Sotirios Athanasiou · Corbeil-Essonnes, FR
• Philippe Galy · Meylan, FR

Key dates

• Filing date: Feb 8, 2017
• Grant date: Jul 30, 2019
• Expiry date: Mar 2, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/512

Abstract

A transistor includes a quasi-intrinsic region of a first conductivity type that is covered with an insulated gate. The quasi-intrinsic region extends between two first doped regions of a second conductivity type. A main electrode is provided on each of the two first doped regions. A second doped region of a second conductivity type is position in contact with the quasi-intrinsic region, but is electrically and physically separated by a distance from the two first doped regions. A control electrode is provided on the second doped region.