Philippe Galy
59Patents
9h-index
28Co-inventors
78Inventor score
Filing activity: Apr 30, 1996 → Jan 11, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5720674A | Golf club head | Human Necessities | 266 | Expired |
| US6217461A | Golf club head | Human Necessities | 243 | Expired |
| US5971867A | Golf club head | Human Necessities | 207 | Expired |
| USD398681S | Golf club head | General | 79 | Expired |
| US6374409B1 | Accessory providing protection against falls in sports such as in-line skating | Human Necessities | 30 | Expired |
| US8331069B2 | Structure for protecting an integrated circuit against electrostatic discharges | Electricity | 25 | Active |
| US6629735B1 | Skate wheel and method of making a skate wheel | Human Necessities | 23 | Expired |
| US9019666B2 | Electronic device, in particular for protection against electrostatic discharges, and method for protecting a component against electrostatic discharges | Electricity | 19 | Active |
| USD436696S | Elbow and knee protector | General | 11 | Expired |
| USD434878S | Elbow and knee protector | General | 8 | Expired |
| US9831288B2 | Integrated circuit cointegrating a FET transistor and a RRAM memory point | Electricity | 7 | Active |
| US9660034B1 | Electronic chip comprising transistors with front and back gates | Electricity | 5 | Active |
| US9299668B2 | Compact electronic device for protecting from electrostatic discharge | Electricity | 4 | Active |
| US9159402B2 | SRAM bitcell implemented in double gate technology | Physics | 4 | Active |
| US9837413B2 | Substrate contact land for an MOS transistor in an SOI substrate, in particular an FDSOI substrate | Electricity | 4 | Active |
| US8598938B2 | Power switch | Electricity | 3 | Active |
| US10367068B2 | Transistor structure | Electricity | 3 | Active |
| US10795396B2 | Electronic device providing a temperature sensor or a current source delivering a temperature independent current | Physics | 3 | Active |
| US10096708B2 | Enhanced substrate contact for MOS transistor in an SOI substrate, in particular an FDSOI substrate | Electricity | 3 | Active |
| US8829620B2 | Transistor with adjustable supply and/or threshold voltage | Electricity | 2 | Active |
| US8907373B2 | Electronic device for protecting from electrostatic discharge | Electricity | 2 | Active |
| US9571160B2 | High data rate serial link | Electricity | 2 | Active |
| US8164871B2 | Circuit for protecting an integrated circuit against elctrostatic discharges in CMOS technology | Electricity | 1 | Active |
| US9368611B2 | Integrated circuit comprising a MOS transistor having a sigmoid response and corresponding method of fabrication | Electricity | 1 | Active |
| US9947650B1 | Device for protection against electrostatic discharges with a distributed trigger circuit | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.