Transistor structure including a scandium gallium nitride back-barrier layer
US10367087B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Sep 9, 2018 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Sep 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
Abstract
A transistor structure including a scandium gallium nitride back-barrier layer. For instance, the transistor structure may include a buffer layer disposed on a substrate and a back-barrier layer disposed on the buffer layer, the back-barrier layer including scandium gallium nitride (ScxGa1-xN). The transistor structure may further include a channel layer disposed on the back-barrier layer, and a barrier layer disposed on the channel layer. The barrier layer may include at least one of aluminum gallium nitride, indium gallium aluminum nitride, scandium aluminum nitride, scandium aluminum gallium nitride, or indium gallium boron aluminum nitride. The transistor structure may be incorporated into a high electron mobility transistor (HEMT).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.