Inventor · Camarillo, CA, US

Robert Coffie

25Patents
12h-index
23Co-inventors
77Inventor score

Filing activity: Oct 25, 2007 → Sep 9, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US7851825B2 Insulated gate e-mode transistors Electricity 105 Active
US8519438B2 Enhancement mode III-N HEMTs Electricity 92 Active
US8390000B2 Semiconductor devices with field plates Electricity 62 Active
US8598937B2 High power semiconductor electronic components with increased reliability Emerging Cross-Sectional Technologies 49 Active
US8692294B2 Semiconductor devices with field plates Electricity 41 Active
US8624662B2 Semiconductor electronic components and circuits Electricity 29 Active
US8841702B2 Enhancement mode III-N HEMTs Electricity 25 Active
US8860495B2 Method of forming electronic components with increased reliability Emerging Cross-Sectional Technologies 17 Active
US9196716B2 Enhancement mode III-N HEMTs Electricity 16 Active
US9437708B2 Enhancement mode III-N HEMTs Electricity 14 Active
US9373699B2 Semiconductor devices with field plates Electricity 13 Active
US9831315B2 Semiconductor devices with field plates Electricity 12 Active
US9111961B2 Semiconductor devices with field plates Electricity 12 Active
US9171836B2 Method of forming electronic components with increased reliability Emerging Cross-Sectional Technologies 12 Active
US9941399B2 Enhancement mode III-N HEMTs Electricity 11 Active
US9293458B2 Semiconductor electronic components and circuits Electricity 10 Active
US7800132B2 High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof Electricity 10 Active
US7897446B2 Method of forming a high electron mobility transistor hemt, utilizing self-aligned miniature field mitigating plate and protective dielectric layer Electricity 7 Active
US7632726B2 Method for fabricating a nitride FET including passivation layers Electricity 6 Active
US7750370B2 High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer Electricity 4 Active
US8431962B2 Composite passivation process for nitride FET Electricity 3 Active
US10109728B2 Transistor structure including a scandium gallium nitride back-barrier layer Electricity 1 Active
US10367087B2 Transistor structure including a scandium gallium nitride back-barrier layer Electricity 1 Active
US9012288B2 Semiconductor devices with field plates General 0 Revoked
US7608865B1 Club extension to a T-gate high electron mobility transistor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.