Multijunction photovoltaic device having an Si barrier between cells
US10367107B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2016 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Dec 16, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic device, particularly a solar cell, comprises an interface between a layer of Group III-V material and a layer of Group IV material with a thin silicon diffusion barrier provided at or near the interface. The silicon barrier controls the diffusion of Group V atoms into the Group IV material, which is doped n-type thereby. The n-type doped region can provide the p-n junction of a solar cell in the Group IV material with superior solar cell properties. It can also provide a tunnel diode in contact with a p-type region of the III-V material, which tunnel diode is also useful in solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.