Shadow mask sidewall tunnel junction for quantum computing

US10367134B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Markus Brink · White Plains, US
• Sami Rosenblatt · White Plains, US

Key dates

• Filing date: Jun 7, 2017
• Grant date: Jul 30, 2019
• Expiry date: Jun 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N60/0156

Abstract

A technique relates to forming a sidewall tunnel junction. A first conducting layer is formed using a first shadow mask evaporation. A second conducting layer is formed on a portion of the first conducting layer, where the second conducting layer is formed using a second shadow mask evaporation. An oxide layer is formed on the first conducting layer and the second conducting layer. A third conducting layer is formed on part of the oxide layer, such that the sidewall tunnel junction is positioned between the first conducting layer and the third conducting layer.