Patent · US Active

Method and device for permanently repairing defects of absent material of a photolithographic mask

US10372032B2 · kind B2 · utility

1Cited by

6References

19Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Jens Oster · Ober-Ramstadt, DE
Kinga Kornilov · Roßdorf, DE
Tristan Bret · Darmstadt, DE
Horst Schneider · Lengerich, DE
Thorsten Hofmann · Rodgau, DE

Key dates

Filing date	Feb 24, 2017
Grant date	Aug 6, 2019
Priority date	—
Expiry date	Jun 15, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/31744
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.