Apparatus and methods to remove unbonded areas within bonded substrates using localized electromagnetic wave annealing
US10373830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Mar 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electromagnetic wave irradiation apparatus and methods to bond unbonded areas in a bonded pair of substrates are disclosed. The unbonded areas between the substrates are eliminated by thermal activation in the unbonded areas induced by electromagnetic wave irradiation having a wavelength selected to effect a phonon or electron excitation. A first substrate of the bonded pair of substrates absorbs the electromagnetic radiation and a portion of a resulting thermal energy transfers to an interface of the bonded pair of substrates at the unbonded areas with sufficient flux to cause opposite sides the first and second substrates to interact and dehydrate to form a bond (e.g., Si—O—Si bond).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.