Benjamin A. Haskell
32Patents
9h-index
31Co-inventors
71Inventor score
Filing activity: Jul 15, 2003 → Sep 7, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7220324B2 | Technique for the growth of planar semi-polar gallium nitride | Emerging Cross-Sectional Technologies | 265 | Expired |
| US7691658B2 | Method for improved growth of semipolar (Al,In,Ga,B)N | Electricity | 247 | Active |
| US7220658B2 | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy | Electricity | 71 | Expired |
| US7208393B2 | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy | Electricity | 63 | Expired |
| US7186302B2 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition | Emerging Cross-Sectional Technologies | 48 | Expired |
| US7846757B2 | Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices | Electricity | 24 | Active |
| US7575947B2 | Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | Electricity | 12 | Active |
| US7687293B2 | Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition | Electricity | 11 | Active |
| US7504274B2 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition | Electricity | 10 | Active |
| US7704331B2 | Technique for the growth of planar semi-polar gallium nitride | Emerging Cross-Sectional Technologies | 9 | Active |
| US7956360B2 | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy | Electricity | 9 | Active |
| US7847293B2 | Growth of reduced dislocation density non-polar gallium nitride | Electricity | 5 | Active |
| US8368179B2 | Miscut semipolar optoelectronic device | Electricity | 4 | Active |
| US8110482B2 | Miscut semipolar optoelectronic device | Electricity | 4 | Active |
| US8128756B2 | Technique for the growth of planar semi-polar gallium nitride | Emerging Cross-Sectional Technologies | 4 | Active |
| US7427555B2 | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy | Electricity | 4 | Expired |
| US8502246B2 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition | Electricity | 3 | Active |
| US8148244B2 | Lateral growth method for defect reduction of semipolar nitride films | Electricity | 2 | Active |
| US9660135B2 | Enhanced performance active pixel array and epitaxial growth method for achieving the same | Electricity | 2 | Active |
| US8524012B2 | Technique for the growth of planar semi-polar gallium nitride | Emerging Cross-Sectional Technologies | 1 | Active |
| US8882935B2 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition | Electricity | 1 | Active |
| US11322652B2 | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods | Emerging Cross-Sectional Technologies | 1 | Active |
| US9978582B2 | Methods for improving wafer planarity and bonded wafer assemblies made from the methods | Electricity | 1 | Active |
| US8686466B2 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices | Electricity | 1 | Active |
| US9443727B2 | Semi-polar III-nitride films and materials and method for making the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.