Photomask manufacturing method

US10373841B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Beijing) Corporation · CN
• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Hai Yang Zhang · Shanghai, CN
• Yan Wang · Shanghai, CN

Key dates

• Filing date: Nov 17, 2017
• Grant date: Aug 6, 2019
• Expiry date: Nov 17, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6211
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A photomask manufacturing method relating to semiconductor technology is presented. The manufacturing method involves providing a substrate structure comprising an etch material layer, a first sacrificial layer on a portion of the etch material layer, and a photomask layer on an upper surface of the etch material layer and on an upper surface and a side surface of the first sacrificial layer; forming a second sacrificial layer covering the photomask layer on the etch material layer and on the side surface of the first sacrificial layer; etching the photomask layer not covered by the second sacrificial layer to expose the first sacrificial layer; removing the first sacrificial layer and the second sacrificial layer; and removing the photomask layer on the etch material layer. This photomask manufacturing method offers a photomask of better symmetricity than those from conventional methods.