Substrate processing method
US10373846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Jul 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate processing method includes a first process of supplying a first gas to a substrate; and a second process of supplying a second gas to the substrate after the first process. When a distance from an edge of the substrate to a boundary between a processing space and a gas exhaust space is L, a cross sectional area of a space orthogonal to a flow of the second gas is S(x), a supply flow rate of the second gas is Q, a pressure within the processing space is P and a diffusion coefficient of the first gas to the second gas is D, at least one of the distance L, the cross sectional area S(x) and the supply flow rate Q in the second process is adjusted such that a Peclet number Pe calculated by expression (3) becomes larger than 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.