Semiconductor device with contracted isolation feature and formation method thereof
US10373879B2 · kind B2 · utility
2Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | May 22, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | May 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming a first dummy gate structure over a substrate, forming gate spacers over the substrate, cutting the first dummy gate structure to form separated dummy gate portions, forming a dielectric feature between the dummy gate portions, and performing a thermal process to the dielectric feature to contract the dielectric feature, wherein the contraction of the dielectric feature deforms at least one of the gate spacers such that a distance between the gate spacers is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.