Thin-film transistor array substrate and manufacturing method thereof
US10373989B2 · kind B2 · utility
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Key dates
| Filing date | Dec 7, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Jan 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film transistor (TFT) array substrate includes a TFT arrangement and a storage capacitor. A gate insulation layer has a portion interposed between two electrode plates of the storage capacitor and thinner than a remaining portion of the gate insulation layer and thus, the thickness of insulation between the electrode plates of the storage capacitor is reduced so that the area of the opposite surfaces of the capacitor can be made smaller and an increased aperture ratio can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.