Resistance change memory devices
US10374011B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 23, 2018 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | May 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance change memory device includes a lower electrode, a ferroelectric material layer disposed on the lower electrode, a resistance switching material layer disposed on the ferroelectric material layer, and an upper electrode disposed on the resistance switching material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.