Undercut control in isotropic wet etch processes
US10374034B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2018 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | May 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes forming a first nanosheet device and forming a second nanosheet device spaced apart from the first nanosheet device in respective first and second regions corresponding to first and second types. The first and second nanosheet devices respectively include a first and a second plurality of work function metal layers, and a work function metal layer extends from the first and second plurality of work function metal layers in the space between the nanosheet devices. In the method, part of the work function metal layer is removed from the space between the nanosheet devices, and the removed part of the work function metal layer is replaced with a polymer brush layer. The first plurality of work function metal layers is selectively removed from the first region with respect to the polymer brush layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.