Muthumanickam Sankarapandian
77Patents
9h-index
130Co-inventors
81Inventor score
Filing activity: Nov 5, 2002 → Nov 10, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7855101B2 | Layer transfer process and functionally enhanced integrated circuits produced thereby | Electricity | 299 | Active |
| US6911400B2 | Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same | Emerging Cross-Sectional Technologies | 58 | Expired |
| US10074575B1 | Integrating and isolating nFET and pFET nanosheet transistors on a substrate | Electricity | 35 | Active |
| US8927442B1 | SiCOH hardmask with graded transition layers | Electricity | 24 | Active |
| US8916337B2 | Dual hard mask lithography process | Emerging Cross-Sectional Technologies | 20 | Active |
| US6641899B1 | Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same | Emerging Cross-Sectional Technologies | 20 | Expired |
| US8859433B2 | DSA grapho-epitaxy process with etch stop material | Electricity | 19 | Active |
| US9171927B2 | Spacer replacement for replacement metal gate semiconductor devices | Electricity | 9 | Active |
| US10256320B1 | Vertical field-effect-transistors having a silicon oxide layer with controlled thickness | Electricity | 9 | Active |
| US7781332B2 | Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer | Electricity | 8 | Active |
| US8470706B2 | Methods to mitigate plasma damage in organosilicate dielectrics | Electricity | 7 | Active |
| US7750479B2 | Treatment of plasma damaged layer for critical dimension retention, pore sealing and repair | Electricity | 7 | Active |
| US8835326B2 | Titanium-nitride removal | Electricity | 6 | Active |
| US8481423B2 | Methods to mitigate plasma damage in organosilicate dielectrics | Electricity | 6 | Active |
| US7378738B2 | Method for producing self-aligned mask, articles produced by same and composition for same | Emerging Cross-Sectional Technologies | 6 | Expired |
| US10242920B2 | Integrating and isolating NFET and PFET nanosheet transistors on a substrate | Electricity | 6 | Active |
| US10374034B1 | Undercut control in isotropic wet etch processes | Electricity | 5 | Active |
| US8129843B2 | Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer | Electricity | 5 | Active |
| US7830010B2 | Surface treatment for selective metal cap applications | Electricity | 5 | Active |
| US10475904B2 | Methods of forming merged source/drain regions on integrated circuit products | Electricity | 4 | Active |
| US8491987B2 | Selectively coated self-aligned mask | Emerging Cross-Sectional Technologies | 4 | Active |
| US10304936B2 | Protection of high-K dielectric during reliability anneal on nanosheet structures | Electricity | 4 | Active |
| US10396208B2 | Vertical transistors with improved top source/drain junctions | Electricity | 4 | Active |
| US11171051B1 | Contacts and liners having multi-segmented protective caps | Electricity | 4 | Active |
| US7459183B2 | Method of forming low-K interlevel dielectric layers and structures | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.