Incoherent type-III materials for charge carriers control devices
US10374037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2014 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Jun 6, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor junction may include a first semiconductor material and a second material. The first and the second semiconductor materials are extrinsically undoped. At least a portion of a valence band of the second material has a higher energy level than at least a portion of the conduction band of the first semiconductor material (type-III band alignment). A flow of a majority of free carriers across the semiconductor junction is diffusive. A region of generation and/or recombination of a plurality of free carriers is confined to a two-dimensional surface of the second material, and at the interface of the first semiconductor material and the second material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.