Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
US10374050B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2015 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | May 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A titanium layer and a nickel layer are sequentially formed on a back surface of a SiC wafer. Next, by high-temperature heat treatment, the SiC wafer is heated and the titanium layer and the nickel layer are sintered forming a nickel silicide layer that includes titanium carbide. By this high-temperature heat treatment, an ohmic contact of the SiC wafer and the nickel silicide layer is formed. Thereafter, on the nickel silicide layer, a back surface electrode multilayered structure is formed by sequentially stacking a titanium layer, a nickel layer, and a gold layer. Here, in forming the nickel layer that configures a back surface electrode multilayered structure, the nickel layer is formed under a condition that satisfies 0.0<y<−0.0013x+2.0, where the thickness of the nickel layer is x [nm] and the deposition rate of the nickel layer is y [nm/second]. Thus, peeling of the back surface electrode can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.