Patent · US Active

Tunnel field effect transistors

US10374068B2 · kind B2 · utility

0Cited by

28References

5Claims

0Family size

Assignees

Infineon Technologies AG · DE
INDIAN INSTITUTE OF TECHNOLOGY BOMBAY · IN

Inventors

Harald Gossner · Riemerling, DE
Ramgopal Rao · Mumbai, IN
Ram Asra · Malta, US

Key dates

Filing date	Jan 11, 2017
Grant date	Aug 6, 2019
Priority date	—
Expiry date	Jan 11, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/822
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Tunnel field effect devices and methods of fabricating tunnel field effect devices are described. In one embodiment, the semiconductor device includes a first drain region of a first conductivity type disposed in a first region of a substrate, a first source region of a second conductivity type disposed in the substrate, the second conductivity type being opposite the first conductivity type, a first channel region electrically coupled between the first source region and the first drain region, the first source region underlying a least a portion of the first channel region, and a first gate stack overlying the first channel region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.