Semiconductor device and method of manufacturing semiconductor device
US10374080B2 · kind B2 · utility
2Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2018 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Apr 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/146
Abstract
On a front surface of a semiconductor base, an n−-type drift layer, a p-type base layer, an n++-type source region, and a gate trench and a contact trench penetrating the n++-type source region and the p-type base layer and reaching the n−-type drift layer are provided. The contact trench is provided separated from the gate trench. A Schottky metal is embedded in the contact trench and forms a Schottky contact with the n−-type drift layer at a side wall of the contact trench. An ohmic metal is provided at a bottom of the contact trench and forms an ohmic contact with the n−-type drift layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.