Plasmonic mode III-V laser as on-chip light source
US10374389B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 30, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Mar 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3401
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A plasmonic light source includes a substrate and a square nano-cavity formed on the substrate. The nano-cavity includes a quantum well structure. The quantum well structure includes III-V materials. A plasmonic metal is formed as an electrode on the square nano-cavity and is configured to excite surface plasmons with the quantum well structure to generate light. Complementary metal oxide semiconductor (CMOS) devices are formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.