Microwave transmitter with improved information throughput
US10374553B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Jun 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity.An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.